The Symposium on 973 Program “Relationship between Defect Density of Mismatched InGaAs Materials and Dark Current of Detectors” was held in Huangshan city, Anhui province on March 22, 2012. 

Program leader Miu Guoqing delivered a report on structure design and energy-band analysis of low defect density InGaAs multi-layer materials. Researcher ZHANG Yonggang and WEI Xin talked about the extended wavelength InGaAs detection materials and micro-nano scale characterization of InGaAs materials respectively at the symposium. 

The attendees had an extensive discussion on novel near-infrared materials, dark current of detectors, carrier transport, and transmission electron microscopy (TEM) characterization, reaching a consensus on the significance of clarifying defects generation and evolution of mismatched InGaAs materials.