The quantum interference corrections to magnetoconductivity were studied experimentally in a gated high-mobility InxGa1−xAs/ InP quantum well structure with strong spin-orbit interaction. The phase-breaking time and spin splitting were extracted by fitting the experimental data using a recent model [L. E. Golub, Phys. Rev.B 71, 235310 (2005)], which is applicable to arbitrarily strong spin-orbit coupling and magnetic field. It is experimentally verified that this model satisfactorily describes the data over a large range of magnetic fields extended from diffusion to nondiffusion regimes. The obtained dependencies of the phase-breaking and spin-relaxation time constants vs temperature and the gate voltage are in good agreement with existing theoretical predictions.

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